Researchers at Lawrence Berkeley National Laboratory and the University of California, Berkeley, have developed a new precision approach for synthesizing graphene nanoribbons from pre-designed molecular building blocks. Using this process the researchers have built nanoribbons that have enhanced properties—such as position-dependent, tunable bandgaps—that are potentially very useful for next-generation electronic circuitry.
Berkeley Lab researchers have opened the door to low-power off/on switches in micro-electro-mechanical systems (MEMS) and nanoelectronic devices, as well as ultrasensitive bio-sensors, with the first observation of piezoelectricity in a free standing two-dimensional semiconductor.
Berkeley Lab researchers used an electric field to reverse the magnetization direction in a multiferroic spintronic device at room temperature, a demonstration that points a new way towards spintronics and smaller, faster and cheaper ways of storing and processing data.
Berkeley Lab researchers report a significant breakthrough in laser technology with the development of a unique microring laser cavity that can produce single-mode lasing on demand. This advance holds ramifications for a wide range of optoelectronic applications including metrology and interferometry, data storage and communications, and high-resolution spectroscopy.
Berkeley Lab reports the first experimental observation of ultrafast charge transfer in photo-excited MX2 materials, the graphene-like two-dimensional semiconductors. Charge transfer time clocked in at under 50 femtoseconds, comparable to the fastest times recorded for organic photovoltaics.
At Berkeley Lab’s Advanced Light Source, researchers for the first time have used x-rays to observe and study skyrmions, subatomic quasiparticles that could play a key role in future spintronic technologies.
Berkeley Lab researchers have demonstrated a technique for detecting and controlling ultrahigh frequency sound waves at the nanometer scale. This represents an advance towards next generation ultrasonic imaging with potentially 1,000 times higher resolution than today’s medical ultrasounds.
Faster electronic device architectures are in the offing with the unveiling of the world’s first fully two-dimensional field-effect transistor (FET) by researchers with Lawrence Berkeley National Laboratory (Berkeley Lab). Unlike conventional FETs made from silicon, these 2D FETs suffer no performance drop-off under high voltages and provide high electron mobility, even when scaled to a
Berkeley Lab researchers have demonstrated a technique whereby semiconductors made from graphene and boron nitride can be charge-doped to alter their electronic properties using only visible light.
Berkeley Lab researchers at the Molecular Foundry have shown that when doping a semiconductor to alter its electrical properties, equally important as the amount of dopant is how the dopant is distributed on the surface and throughout the material.